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| 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. B 6 C 5 E 4 VDE Standards These couplers perform safety functions according to the following equipment standards: 1 2 A (+) C (-) 3 n.c. 95 10805 D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 4N25V/ 4N25GV1) >20% 4N35V/ 4N35GV1) >100% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 86 Rev. A4, 11-Jan-99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Features Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664) D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VCEO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 -55 to +100 -55 to +125 260 Unit kV mW C C C 2 mm from case, t 10 s Rev. A4, 11-Jan-99 87 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA Tamb = 100C VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.2 50 Max. 1.4 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 10 V, IF = 0, Tamb = 100C VCE = 30 V, IF = 0, Tamb = 100C Symbol VCEO VECO ICEO ICEO Min. 32 7 Typ. Max. Unit V V nA 50 500 mA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 50 mA, IC = 2 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 1 Current Transfer Ratio (CTR) Parameter IC/IF Type 4N25(G)V 4N35(G)V VCE = 10 V, IF = 10 mA, 4N35(G)V Tamb = 100C Test Conditions VCE = 10 V, IF = 10 mA Symbol CTR CTR CTR Min. 0.20 1.00 0.40 Typ. 1 1.5 Max. Unit 88 Rev. A4, 11-Jan-99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage - 100%, ttest = 1 s Routine test Partial discharge test voltage - tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C (construction test only) 300 V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W - Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA ) Phototransistor Psi ( mW ) VIOWM VIORM P tot 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 75 100 125 150 13930 94 9182 Tsi - Safety Temperature ( C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A4, 11-Jan-99 89 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Switching Characteristics of 4N25(G)V Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W ( (see figure 3) g ) Symbol td tr tf ts ton toff ton toff Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 Unit VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g ) ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms Switching Characteristics of 4N35(G)V Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 RG = 50 W tp 0.01 T tp = 50 ms IF Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure 3) g ) VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 4.2 0.3 <10.0 <10.0 9.0 25.0 Unit +5V IC = 5 mA/ 2 mA; Adjusted through input amplitude 96 11698 + IF 0 Channel I 50 W 14950 tp Oscilloscope RL 1 MW CL 20 pF IC 100% 90% t 100 W Channel II Figure 3. Test circuit, non-saturated operation IF 0 RG = 50 W tp T IF = 10 mA +5V IC 10% 0 tr td ton Channel I 50 W 95 10844 t ts toff tf + 0.01 tp = 50 ms Oscilloscope RL 1 MW CL 20 pF tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time Channel II 1 kW ts tf toff (= ts + tf) storage time fall time turn-off time Figure 4. Test circuit, saturated operation Figure 5. Switching times 90 Rev. A4, 11-Jan-99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device ICEO- Collector Dark Current, with open Base ( nA ) 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 VCE=10V IF=0 1000 100 10 1 40 80 120 96 11875 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature 1000.0 I CB - Collector Base Current ( mA ) Tamb - Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature 1.000 VCB=10V I F - Forward Current ( mA ) 100.0 0.100 10.0 0.010 1.0 0.1 0 96 11862 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 0.001 1 96 11876 10 IF - Forward Current ( mA ) 100 Figure 7. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 VCE=10V IF=10mA Figure 10. Collector Base Current vs. Forward Current 100.00 VCE=10V IC - Collector Current ( mA ) 10.00 1.00 0.10 0.01 0.1 96 11904 1.0 10.0 100.0 96 11874 Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Tamb - Ambient Temperature ( C ) IF - Forward Current ( mA ) Figure 11. Collector Current vs. Forward Current Rev. A4, 11-Jan-99 91 4N25(G)V/ 4N35(G)V Series Vishay Telefunken 1000 IF=50mA IC - Collector Current ( mA ) CTR - Current Transfer Ratio ( % ) 20mA VCE=20V 100.0 10.0 10mA 5mA 100 1.0 2mA 1mA 10 0.1 0.1 96 11905 1 1.0 10.0 100.0 95 10976 0.1 1 10 100 Figure 12. Collector Current vs. Collector Emitter Voltage V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 VCE - Collector Emitter Voltage ( V ) IF - Forward Current ( mA ) Figure 15. Current Transfer Ratio vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 50 Saturated Operation VS=5V RL=1kW 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 0 1 10 IC - Collector Current ( mA ) 100 40 30 toff 20 10 0 0 5 10 15 ton 20 95 10972 95 10974 IF - Forward Current ( mA ) Figure 13. Collector Emitter Saturation Voltage vs. Collector Current 1000 Figure 16. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=10V RL=100W toff 10 ton 5 hFE - DC Current Gain 800 VCE=10V 600 5V 400 200 0 0.01 15 0 0.1 1 10 100 95 10975 0 2 4 6 8 10 95 10973 IC - Collector Current ( mA ) IC - Collector Current ( mA ) Figure 14. DC Current Gain vs. Collector Current Figure 17. Turn on / off Time vs. Collector Current 92 Rev. A4, 11-Jan-99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Type Date Code (YM) XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo Coupling System Indicator Company Logo Figure 18. Marking example Dimensions of 4N25G/ 4N35G in mm weight: ca. 0.50 g creepage distance: air path:y 8 mm y 8 mm after mounting on PC board 14771 Rev. A4, 11-Jan-99 93 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Dimensions of 4N25/ 4N35 in mm weight: 0.50 g creepage distance: air path:y 6 mm y 6 mm after mounting on PC board 14770 94 Rev. A4, 11-Jan-99 |
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